NGTB20N120IHLWG ON Semiconductor, NGTB20N120IHLWG Datasheet - Page 6

• Manufacturer Part Number: NGTB20N120IHLWG
• Description: IGBT Transistors
• Manufacturer: ON Semiconductor

Specifications of NGTB20N120IHLWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Power Dissipation: 250 W
• Package / Case: TO-247
• Mounting Style: Through Hole

0.001
0.001
0.01
0.01
0.000001
0.000001
0.1
0.1
10
1
1
20%
10%
50% Duty Cycle
10%
5%
5%
1%
2%
2%
1%
50% Duty Cycle
20%
Single Pulse
Single Pulse
0.00001
0.00001
0.0001
0.0001
Figure 20. Test Circuit for Switching Characteristics
Figure 19. Diode Transient Thermal Impedance
Figure 18. IGBT Transient Thermal Impedance
TYPICAL CHARACTERISTICS
0.001
0.001
http://onsemi.com
PULSE TIME (sec)
PULSE TIME (sec)
0.01
0.01
C
C
i
i
Junction
Junction
= t
= t
6
i
i
/R
/R
i
i
R
C
R
C
1
1
1
1
0.1
0.1
R
C
R
C
2
2
2
2
Duty Factor = t
Peak T
Duty Factor = t
Peak T
R
1
1
qJC
R
= 2.0
J
J
qJC
= P
= P
= 0.65
R
R
C
DM
C
DM
n
n
n
n
1
1
10
10
x Z
x Z
/t
/t
2
2
Case
Case
qJC
qJC
+ T
+ T
0.06231
0.10246
0.57713
0.67147
0.02659
0.25813
0.38693
R
R
0.2121
0.1057
0.1057
C
C
i
i
(°C/W)
(°C/W)
100
100
1.76E−4
1.48E−4
1.0E−4
0.002
t
t
0.002
0.03
i
i
2.0
2.0
0.1
0.1
(sec)
(sec)
1000
1000