NGTB20N120IHLWG ON Semiconductor, NGTB20N120IHLWG Datasheet - Page 7

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NGTB20N120IHLWG

Manufacturer Part Number
NGTB20N120IHLWG
Description
IGBT Transistors
Manufacturer
ON Semiconductor
Datasheet

Specifications of NGTB20N120IHLWG

Rohs
yes
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
40 A
Power Dissipation
250 W
Package / Case
TO-247
Mounting Style
Through Hole

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NGTB20N120IHLWG
Manufacturer:
ON/安森美
Quantity:
20 000
NGTB20N120IHLWG
Figure 21. Definition of Turn On Waveform
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