FDMS86200DC Fairchild Semiconductor, FDMS86200DC Datasheet

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FDMS86200DC

Manufacturer Part Number
FDMS86200DC
Description
MOSFET 150V/20V N Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMS86200DC

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
28 A
Resistance Drain-source Rds (on)
17 mOhms, 25 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56-8
Fall Time
5 ns
Forward Transconductance Gfs (max / Min)
32 S
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
4 ns
Typical Turn-off Delay Time
23 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS86200DC
Quantity:
290
©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS86200DC
N-Channel Dual Cool
150 V, 28 A, 17 mΩ
Features
V
V
I
E
P
T
R
R
R
R
R
R
R
D
Pin 1
J
DS
GS
AS
D
θJC
θJC
θJA
θJA
θJA
θJA
θJA
Dual Cool
Max r
Max r
High performance technology for extremely low r
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
86200
TM
= 17 mΩ at V
= 25 mΩ at V
Top Side Cooling PQFN package
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMS86200DC
= 10 V, I
= 6 V, I
-Continuous
-Pulsed
-Continuous
Device
Power 56
D
TM
D
= 7.8 A
= 9.3 A
G
T
Power Trench
A
S
= 25 °C unless otherwise noted
S
Parameter
Dual Cool
DS(on)
S
Bottom
Package
TM
Power 56
D
T
T
T
T
1
Pin 1
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
A
C
A
C
D
= 25 °C
= 25 °C
= 25 °C
= 25 °C
®
Primary MOSFET
Secondary Synchronous rectifier
Load switch
D
MOSFET
D
Reel Size
(Bottom Drain)
(Top Source)
13’’
S
S
G
S
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1k)
(Note 1i)
(Note 1j)
(Note 4)
(Note 3)
advanced
Tape Width
12 mm
Power
-55 to +150
Ratings
150
±20
100
294
125
9.3
3.2
2.5
1.0
28
38
81
16
23
11
Trench
December 2012
D
D
D
D
www.fairchildsemi.com
®
3000 units
TM
Quantity
process.
package
Units
°C/W
mJ
DS(on)
°C
W
V
V
A

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FDMS86200DC Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86200 FDMS86200DC ©2012 Fairchild Semiconductor Corporation FDMS86200DC Rev ® Power Trench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool = 7 ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2012 Fairchild Semiconductor Corporation FDMS86200DC Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25° ...

Page 3

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 294 mJ is based on starting Pulsed Id limited by junction temperature, td<=10uS, please refer to SOA curve for more details. ©2012 Fairchild Semiconductor Corporation FDMS86200DC Rev pad copper 2 pad copper 2 pad copper 2 ...

Page 4

... DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS86200DC Rev °C unless otherwise noted J μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX = 5 ...

Page 5

... CURVE BENT MEASURED DATA 0.001 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86200DC Rev °C unless otherwise noted J 10000 = 50 V 1000 V = 100 100 ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86200DC Rev °C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 7

... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS86200DC Rev www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS86200DC Rev. C1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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