FDMS86200DC Fairchild Semiconductor, FDMS86200DC Datasheet - Page 6

• Manufacturer Part Number: FDMS86200DC
• Description: MOSFET 150V/20V N Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86200DC

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 17 mOhms, 25 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56-8
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 32 S
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Rise Time: 4 ns
• Typical Turn-off Delay Time: 23 ns

©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. C1
Typical Characteristics
0.001
0.01
0.1
2
1
10
-3
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-2
SINGLE PULSE
R
θ
T
JA
J
= 81
= 25 °C unless otherwise noted
o
C/W
10
t, RECTANGULAR PULSE DURATION (sec)
-1
6
1
10
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
θJA
DM
100
1
/t
x R
2
θJA
t
1
+ T
t
2
A
www.fairchildsemi.com
1000