FDMS86200DC Fairchild Semiconductor, FDMS86200DC Datasheet - Page 3

• Manufacturer Part Number: FDMS86200DC
• Description: MOSFET 150V/20V N Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86200DC

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 17 mOhms, 25 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56-8
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 32 S
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Rise Time: 4 ns
• Typical Turn-off Delay Time: 23 ns

©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. C1
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
4. Pulsed Id limited by junction temperature, td<=10uS, please refer to SOA curve for more details.
Thermal Characteristics
R
R
R
R
R
R
R
R
R
R
R
R
R
R
by the user's board design.
θJC
θJC
θJA
θJA
θJA
θJA
θJA
θJA
θJA
θJA
θJA
θJA
θJA
θJA
AS
θJA
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
of 294 mJ is based on starting T
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
J
= 25
2
a. 38 °C/W when mounted on
pad of 2 oz copper
°
C; N-ch: L = 3 mH, I
a 1 in
2
pad of 2 oz copper
2
pad of 2 oz copper
AS
= 14 A, V
2
pad of 2 oz copper
DD
= 150 V, V
2
3
pad of 2 oz copper
GS
= 10 V. 100% test at L = 0.1 mH, I
2
pad of 2 oz copper
(Bottom Drain)
(Top Source)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1g)
(Note 1h)
(Note 1k)
(Note 1f)
(Note 1i)
(Note 1j)
(Note 1l)
θJC
is guaranteed by design while R
b. 81 °C/W when mounted on
AS
a minimum pad of 2 oz copper
= 42 A.
2.5
1.0
38
81
27
34
16
19
26
61
16
23
13
11
θCA
www.fairchildsemi.com
is determined
°C/W