FDMS86200DC Fairchild Semiconductor, FDMS86200DC Datasheet - Page 2

• Manufacturer Part Number: FDMS86200DC
• Description: MOSFET 150V/20V N Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86200DC

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 17 mOhms, 25 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56-8
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 32 S
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Rise Time: 4 ns
• Typical Turn-off Delay Time: 23 ns

©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
iss
oss
rss
g
SD
ΔT
ΔT
g(TOT)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
V
V
V
I
V
V
V
V
D
D
V
V
V
V
D
V
f = 1 MHz
V
V
I
DS
GS
GS
GS
GS
GS
DS
F
DD
GS
GS
GS
DS
= 250 μA, V
= 250 μA, referenced to 25°C
GS
GS
= 250 μA, referenced to 25 °C
= 9.3 A, di/dt = 100 A/μs
= 120 V, V
= ±20 V, V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 75 V, V
= 75 V , I
= 10 V, R
= 0 V to 10 V
= 0 V to 6 V
= 0 V, I
= 0 V, I
DS
2
Test Conditions
, I
D
S
S
D
D
D
D
GS
= 7.8 A
= 9.3 A
= 2.6 A
D
GS
GEN
GS
DS
= 250 μA
= 9.3 A
= 9.3 A
= 9.3 A, T
= 9.3 A,
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 9.3 A
= 75 V
J
= 125 °C
(Note 2)
(Note 2)
Min
150
0.1
2.0
2110
126
9.7
5.6
0.8
0.7
Typ
205
105
3.3
-11
16
23
30
19
79
8.1
1.5
14
17
29
32
4
5
±100
2955
126
176
Max
1.3
1.2
290
4.0
29
10
37
10
42
27
3.0
17
25
35
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15
1
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
μA
nA
ns
ns
ns
ns
ns
pF
pF
pF
V
Ω
V
V
S