FDMS86200DC Fairchild Semiconductor, FDMS86200DC Datasheet - Page 2
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FDMS86200DC
Manufacturer Part Number
FDMS86200DC
Description
MOSFET 150V/20V N Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS86200DC.pdf
(8 pages)
Specifications of FDMS86200DC
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
28 A
Resistance Drain-source Rds (on)
17 mOhms, 25 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56-8
Fall Time
5 ns
Forward Transconductance Gfs (max / Min)
32 S
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
4 ns
Typical Turn-off Delay Time
23 ns
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©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
iss
oss
rss
g
SD
ΔT
ΔT
g(TOT)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
V
V
V
I
V
V
V
V
D
D
V
V
V
V
D
V
f = 1 MHz
V
V
I
DS
GS
GS
GS
GS
GS
DS
F
DD
GS
GS
GS
DS
= 250 μA, V
= 250 μA, referenced to 25°C
GS
GS
= 250 μA, referenced to 25 °C
= 9.3 A, di/dt = 100 A/μs
= 120 V, V
= ±20 V, V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 75 V, V
= 75 V , I
= 10 V, R
= 0 V to 10 V
= 0 V to 6 V
= 0 V, I
= 0 V, I
DS
2
Test Conditions
, I
D
S
S
D
D
D
D
GS
= 7.8 A
= 9.3 A
= 2.6 A
D
GS
GEN
GS
DS
= 250 μA
= 9.3 A
= 9.3 A
= 9.3 A, T
= 9.3 A,
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 9.3 A
= 75 V
J
= 125 °C
(Note 2)
(Note 2)
Min
150
0.1
2.0
2110
126
9.7
5.6
0.8
0.7
Typ
205
105
3.3
-11
16
23
30
19
79
8.1
1.5
14
17
29
32
4
5
±100
2955
126
176
Max
1.3
1.2
290
4.0
29
10
37
10
42
27
3.0
17
25
35
www.fairchildsemi.com
15
1
mV/°C
mV/°C
Units
mΩ
nC
nC
nC
nC
nC
μA
nA
ns
ns
ns
ns
ns
pF
pF
pF
V
Ω
V
V
S