SIHB30N60E-GE3 Vishay/Siliconix, SIHB30N60E-GE3 Datasheet

SIHB30N60E-GE3

Manufacturer Part Number

SIHB30N60E-GE3

Description

MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS

Manufacturer

Vishay/Siliconix

Datasheet

1.SIHB30N60E-GE3.pdf (9 pages)

Specifications of SIHB30N60E-GE3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

29 A

Resistance Drain-source Rds (on)

125 mOhms at 10 V

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

D2PAK (TO-263)

Fall Time

36 ns

Forward Transconductance Gfs (max / Min)

5.4 S

Gate Charge Qg

85 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

250 W

Rise Time

32 ns

Typical Turn-off Delay Time

63 ns

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

c. 1.6 mm from case.

d. I

S12-3103-Rev. E, 24-Dec-12

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

Continuous Drain Current (T

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt

Soldering Recommendations (Peak Temperature)

DS(on)

max. (nC)

(nC)

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

(V) at T

(nC)

 I

G D

= 50 V, starting T

max. at 25 °C ()

, dI/dt = 100 A/μs, starting T

PAK (TO-263)

max.

www.vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 25 °C, L = 28.2 mH, R

= 150 °C)

= 10 V

= 25 °C.

N-Channel MOSFET

E Series Power MOSFET

Single

For technical questions, contact:

650

130

= 25 , I

= 25 °C, unless otherwise noted)

0.125

at 10 V

= 7 A.

for 10 s

= 125 °C

SiHB30N60E-GE3

= 100 °C

= 25 °C

FEATURES

• Low Figure-of-Merit (FOM) R

• Low Input Capacitance (C

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions please see

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

• Industrial

• Battery Chargers

• Renewable Energy

PAK (TO-263)

www.vishay.com/doc?99912

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

- LED Lighting

- Welding

- Induction Heating

- Motor Drives

- Solar (PV Inverters)

hvm@vishay.com

SYMBOL

www.vishay.com/doc?91000

dV/dt

, T

stg

iss

- 55 to + 150

)

LIMIT

300

± 20

600

690

250

x Q

Vishay Siliconix

SiHB30N60E

Document Number: 91453

UNIT

W/°C

V/ns

°C

Related parts for SIHB30N60E-GE3

SIHB30N60E-GE3 Summary of contents

Page 1

... Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting S - LED Lighting • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers • Renewable Energy - Solar (PV Inverters PAK (TO-263) SiHB30N60E-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 100 ° 125 ° ...

Page 2

... dI/dt = 100 A/μ RRM while V is rising from oss DS while V is rising from oss DS 2 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB30N60E Vishay Siliconix MAX. UNIT 62 °C/W 0.5 MIN. TYP. MAX. 600 - - = 250 μ ± ...

Page 3

... Fig Typical Capacitance vs. Drain-to-Source Voltage = 150 ° Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB30N60E Vishay Siliconix 100 120 140 160 T - Junction Temperature (° iss ...

Page 4

... Fig Maximum Drain Current vs. Case Temperature Limited 100 μ 100 1000 is specified Fig Temperature vs. Drain-to-Source Voltage 0.01 Square Wave Pulse Duration (s) 4 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB30N60E Vishay Siliconix 50 75 100 125 150 T - Temperature (° Temperature (°C) J 0.1 1 ...

Page 5

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig Unclamped Inductive Waveforms Fig Basic Gate Charge Waveform + For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB30N60E Vishay Siliconix Charge Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U.T. ...

Page 6

... Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHB30N60E Vishay Siliconix + + Document Number: 91453 ...

Page 7

TO-263AB (HIGH VOLTAGE) (Datum Lead tip MILLIMETERS DIM. MIN. MAX. A 4.06 4.83 ...

Page 8

RECOMMENDED MINIMUM PADS FOR D Return to Index Document Number: 73397 11-Apr-05 2 PAK: 3-Lead 0.420 (10.668) 0.135 (3.429) 0.200 (5.080) Recommended Minimum Pads Dimensions in Inches/(mm) AN826 Vishay Siliconix 0.145 (3.683) 0.050 (1.257) www.vishay.com 1 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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