SIHB30N60E-GE3 Vishay/Siliconix, SIHB30N60E-GE3 Datasheet - Page 7

• Manufacturer Part Number: SIHB30N60E-GE3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHB30N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK (TO-263)
• Fall Time: 36 ns
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 85 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W
• Rise Time: 32 ns
• Typical Turn-off Delay Time: 63 ns

TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
outmost extremes of the plastic body at datum A.
DIM.
A1
b1
b2
b3
c1
c2
A
D
b
c
4
(Datum A)
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
L1
L2
D
MILLIMETERS
B
B
2 x e
Lead tip
1
3
B
B
MAX.
4
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
E
2
C
4
3
C
2 x b
2 x b2
0.010
A
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
H
MIN.
5
M
INCHES
A
Plating
M
(c)
B
Section B - B and C - C
Detail A
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
Scale: none
b1, b3
(b, b2)
5
± 0.004
c
A
c1
c2
Base
metal
M
B
5
B
A
A
DIM.
D1
E1
L1
L2
L3
L4
H
E
e
L
0° to 8°
L3
Gauge
plane
14.61
MIN.
6.86
9.65
6.22
1.78
4.78
MILLIMETERS
-
-
Package Information
2.54 BSC
0.25 BSC
Rotated 90° CW
L
View A - A
scale 8:1
Detail “A”
L4
E1
E
MAX.
10.67
15.88
2.79
1.65
1.78
5.28
-
-
D1
Vishay Siliconix
4
H
A1
4
0.270
0.380
0.245
0.575
0.070
0.188
MIN.
B
-
-
0.100 BSC
0.010 BSC
Seating plane
INCHES
www.vishay.com
MAX.
0.420
0.625
0.110
0.066
0.070
0.208
-
-
1