SIHB30N60E-GE3 Vishay/Siliconix, SIHB30N60E-GE3 Datasheet - Page 8

• Manufacturer Part Number: SIHB30N60E-GE3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHB30N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK (TO-263)
• Fall Time: 36 ns
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 85 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W
• Rise Time: 32 ns
• Typical Turn-off Delay Time: 63 ns

AN826
Vishay Siliconix
2
RECOMMENDED MINIMUM PADS FOR D
PAK: 3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
www.vishay.com
1
11-Apr-05