SIHB30N60E-GE3 Vishay/Siliconix, SIHB30N60E-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIHB30N60E-GE3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHB30N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK (TO-263)
• Fall Time: 36 ns
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 85 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W
• Rise Time: 32 ns
• Typical Turn-off Delay Time: 63 ns

S12-3103-Rev. E, 24-Dec-12
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 14 - Unclamped Inductive Test Circuit
to obtain
90 %
10 %
AS
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Fig. 12 - Switching Time Test Circuit
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Fig. 13 - Switching Time Waveforms
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GS
R
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 V
www.vishay.com
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10 V
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GS
d(on)
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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D.U.T
D.U.T.
0.01 Ω
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d(off)
For technical questions, contact:
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[e-mail]
Fig. 15 - Unclamped Inductive Waveforms
10 V
www.vishay.com/doc?91000
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Fig. 16 - Basic Gate Charge Waveform
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12 V
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Fig. 17 - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
GS
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
t
GD
p
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Vishay Siliconix
SiHB30N60E
Document Number: 91453
D.U.T.
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