SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet
SIZ902DT-T1-GE3
Specifications of SIZ902DT-T1-GE3
Related parts for SIZ902DT-T1-GE3
SIZ902DT-T1-GE3 Summary of contents
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... Pin Ordering Information: SiZ902DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source Drain Diode Current Single Pulse Avalanche Current ...
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... SiZ902DT Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...
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... Channel dI/dt = 100 A/µ ° Channel dI/dt = 100 A/µ ° This document is subject to change without notice. SiZ902DT Vishay Siliconix Min. Typ. Max. Unit Ch-1 ...
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... SiZ902DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted thru 0.0 0.5 1.0 1.5 2 Drain-to-Source Voltage (V) DS Output Characteristics 0.014 0.012 0.010 0.008 0.006 Drain Current (A) D On-Resistance vs. Drain Current ...
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... T A BVDSS Limited 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient This document is subject to change without notice. SiZ902DT Vishay Siliconix 125 ° ° Gate-to-Source Voltage ( ...
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... SiZ902DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Package Limited 100 T - Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 63465 S11-2380 Rev. B, 28-Nov-11 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 0.01 0.1 1 Square Wave Pulse Duration (s) 0.01 Square Wave Pulse Duration (s) This document is subject to change without notice. SiZ902DT Vishay Siliconix Notes ...
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... SiZ902DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted thru 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.008 V = 4.5 V 0.007 GS 0.006 0.005 0.004 Drain Current (A) D On-Resistance vs. Drain Current ...
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... A BVDSS Limited 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient This document is subject to change without notice. SiZ902DT Vishay Siliconix 125 ° ° Gate-to-Source Voltage ( ...
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... SiZ902DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Package Limited 100 T - Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... S11-2380 Rev. B, 28-Nov-11 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 0.01 0.1 1 Square Wave Pulse Duration (s) 0.001 0.01 Square Wave Pulse Duration (s) This document is subject to change without notice. SiZ902DT Vishay Siliconix Notes Duty Cycle ...
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PowerPAIR D 0. Pin 8 Pin 7 Pin 6 Pin 2 Pin 1 Pin 3 TOP SIDE VIEW 0.10 C 0.08 C MILLIMETERS DIM. MIN. A 0. ...
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RECOMMENDED MINIMUM PAD FOR PowerPAIR Document Number: 67480 Revision: 13-Jan-11 ® 7.080 (0.279) (0,0) 0.567 (0.022) 3.920 (0.154) 2.153 (0.085) 3.260 Pin 1 (0.128) 1.270 (0.050) Recommended Minimum Pad Dimensions in mm (inches) PAD Pattern Vishay Siliconix ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...