SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIZ902DT-T1-GE3
• Description: MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ902DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.012 Ohms at 10 V, 0.0064 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR-8
• Fall Time: 10 nS, 10 nS
• Gate Charge Qg: 6.8 nC, 21 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 66 W
• Rise Time: 12 nS, 10 nS
• Typical Turn-off Delay Time: 20 nS, 35 nS
• Part # Aliases: SIZ902DT-GE3

SiZ902DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
50
40
30
20
10
0
0
Package Limited
25
Current Derating*
T
C
D
50
- Case Temperature (°C)
is based on T
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
This document is subject to change without notice.
125
150
New Product
30
25
20
15
10
5
0
25
Power, Junction-to-Case
50
T
C
- Case Temperature (°C)
75
S11-2380 Rev. B, 28-Nov-11
100
Document Number: 63465
www.vishay.com/doc?91000
125
150