SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIZ902DT-T1-GE3
• Description: MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ902DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.012 Ohms at 10 V, 0.0064 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR-8
• Fall Time: 10 nS, 10 nS
• Gate Charge Qg: 6.8 nC, 21 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 66 W
• Rise Time: 12 nS, 10 nS
• Typical Turn-off Delay Time: 20 nS, 35 nS
• Part # Aliases: SIZ902DT-GE3

SiZ902DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.014
0.012
0.010
0.008
0.006
10
60
50
40
30
20
10
8
6
4
2
0
0
0.0
0
0
I
D
V
V
On-Resistance vs. Drain Current
GS
= 13.8 A
GS
0.5
10
V
= 4.5 V
= 10 V
DS
3
V
Output Characteristics
DS
= 7.5 V
Q
- Drain-to-Source Voltage (V)
g
V
1.0
20
I
- Total Gate Charge (nC)
GS
Gate Charge
D
V
DS
- Drain Current (A)
= 10 V thru 4 V
6
= 15 V
1.5
30
9
V
2.0
40
DS
= 24 V
V
V
GS
GS
This document is subject to change without notice.
12
2.5
50
= 3 V
= 2 V
3.0
15
60
New Product
1200
1000
800
600
400
200
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
20
16
12
8
4
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
I
D
-- 25
0.5
= 13.8 A
5
Transfer Characteristics
V
V
C
GS
DS
C
T
0
iss
1.0
J
oss
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
10
Capacitance
= 125 °C
V
25
GS
T
1.5
C
= 10 V; 4.5 V
= 25 °C
15
50
2.0
S11-2380 Rev. B, 28-Nov-11
Document Number: 63465
75
www.vishay.com/doc?91000
20
2.5
T
C
100
= - 55 °C
25
3.0
125
3.5
150
30