SIZ902DT-T1-GE3 Vishay/Siliconix, SIZ902DT-T1-GE3 Datasheet - Page 13

• Manufacturer Part Number: SIZ902DT-T1-GE3
• Description: MOSFET 30V 16/16A 29/66W 12/6.4mOhms @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ902DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 0.012 Ohms at 10 V, 0.0064 Ohms at 10 V
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR-8
• Fall Time: 10 nS, 10 nS
• Gate Charge Qg: 6.8 nC, 21 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 66 W
• Rise Time: 12 nS, 10 nS
• Typical Turn-off Delay Time: 20 nS, 35 nS
• Part # Aliases: SIZ902DT-GE3

RECOMMENDED MINIMUM PAD FOR PowerPAIR
Document Number: 67480
Revision: 13-Jan-11
Pin 1
(0.022)
(0.085)
0.567
2.153
(0.128)
3.260
®
Recommended Minimum Pad
Dimensions in mm (inches)
6 x 5
(0,0)
(0.279)
7.080
(0.050)
(0.154)
1.270
3.920
(0.022)
0.560
(0.038)
0.970
(0.028)
0.700
(0.024)
(0.016)
(0.016)
0.616
0.407
0.407
Vishay Siliconix
PAD Pattern
www.vishay.com
1