PSMN1R1-40BS,118 NXP Semiconductors, PSMN1R1-40BS,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN1R1-40BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R1-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 1.3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN1R1-40BS
Product data sheet
Table 6.
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
18000
14000
10000
(pF)
(S)
g
6000
2000
200
150
100
C
fs
50
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
1
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
15
…continued
30
10
C
C
V
iss
rss
45
GS
Conditions
I
see
I
V
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S
S
(V)
003aaf316
003aaf320
DS
I
= 25 A; V
= 25 A; dI
D
(A)
Figure 17
= 20 V
10
Rev. 2 — 29 February 2012
60
2
GS
S
/dt = -100 A/µs; V
N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(m Ω )
(A)
I
DSon
D
75
60
45
30
15
0
8
6
4
2
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
GS
4
0
= 0 V;
8
2
PSMN1R1-40BS
T
j
= 175 ° C
Min
-
-
-
12
4
Typ
0.8
64
117
16
© NXP B.V. 2012. All rights reserved.
V
T
GS
V
003aaf317
003aag669
j
GS
= 25 ° C
(V)
Max
1.2
-
-
(V)
20
6
V
Unit
ns
nC
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