PSMN010-25YLC,115 NXP Semiconductors, PSMN010-25YLC,115 Datasheet - Page 11

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PSMN010-25YLC,115

Manufacturer Part Number
PSMN010-25YLC,115
Description
MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN010-25YLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
22.5 V
Continuous Drain Current
39 A
Resistance Drain-source Rds (on)
10.6 mOhms
Mounting Style
SMD/SMT
Package / Case
SO-8
Power Dissipation
30 W
Factory Pack Quantity
1500
NXP Semiconductors
7. Package outline
Fig 19. Package outline SOT669 (LFPAK; Power-SO8)
PSMN010-25YLC
Product data sheet
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
UNIT
mm
H
OUTLINE
VERSION
SOT669
L 1
L 2
D
1.20
1.01
A
0.15
0.00
A 1
1.10
0.95
A 2
1
e
N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology
0.25
A 3
IEC
2
b 2
E
0.50
0.35
b
1/2
4.41
3.62
e
3
b 2
b
2.2
2.0
b 3
MO-235
All information provided in this document is subject to legal disclaimers.
JEDEC
4
0.9
0.7
b 4
0
A
REFERENCES
w
Rev. 2 — 25 October 2011
0.25
0.19
M
c
mounting
A
base
0.30
0.24
c 2
c 2
JEITA
scale
4.10
3.80
D
2.5
(1)
A 2
A
D 1
max
4.20
c
(1)
A 1
E
5.0
4.8
C
(1)
C
X
E 1
5 mm
3.3
3.1
(1)
1.27
e
D 1
PSMN010-25YLC
detail X
6.2
5.8
H
PROJECTION
EUROPEAN
0.85
0.40
L
1.3
0.8
L 1
b 3
L
E 1
1.3
0.8
L 2
© NXP B.V. 2011. All rights reserved.
0.25
ISSUE DATE
w
(A )
b 4
06-03-16
11-03-25
3
y C
0.1
y
θ
SOT669
θ
11 of 15

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