PSMN010-25YLC,115 NXP Semiconductors, PSMN010-25YLC,115 Datasheet - Page 4

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PSMN010-25YLC,115

Manufacturer Part Number
PSMN010-25YLC,115
Description
MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN010-25YLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
22.5 V
Continuous Drain Current
39 A
Resistance Drain-source Rds (on)
10.6 mOhms
Mounting Style
SMD/SMT
Package / Case
SO-8
Power Dissipation
30 W
Factory Pack Quantity
1500
NXP Semiconductors
PSMN010-25YLC
Product data sheet
Fig 3.
Fig 4.
(A)
I
D
10
10
10
10
-1
3
2
1
10
Single pulse avalanche rating; avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology
Limit R
(A)
I
AL
10
10
10
-1
2
1
10
DSon
All information provided in this document is subject to legal disclaimers.
-3
= V
1
DS
/ I
Rev. 2 — 25 October 2011
10
D
-2
10
-1
(1)
(2)
DC
1
003aag231
t
AL
(ms)
10
10
PSMN010-25YLC
V
DS
(V)
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
© NXP B.V. 2011. All rights reserved.
003aag232
10
2
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