PSMN010-25YLC,115 NXP Semiconductors, PSMN010-25YLC,115 Datasheet - Page 5

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PSMN010-25YLC,115

Manufacturer Part Number
PSMN010-25YLC,115
Description
MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN010-25YLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
22.5 V
Continuous Drain Current
39 A
Resistance Drain-source Rds (on)
10.6 mOhms
Mounting Style
SMD/SMT
Package / Case
SO-8
Power Dissipation
30 W
Factory Pack Quantity
1500
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN010-25YLC
Product data sheet
Symbol
R
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.05
0.02
δ = 0.5
0.1
Thermal characteristics
0.2
Parameter
thermal resistance from
junction to mounting base
single shot
N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 25 October 2011
Conditions
see
Figure 5
10
-3
10
-2
PSMN010-25YLC
Min
-
10
P
-1
tp
Typ
4.87
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
003aag218
δ =
Max
5.06
T
tp
t
1
Unit
K/W
5 of 15

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