NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet - Page 12

• Manufacturer Part Number: NX3008NBKS,115
• Description: MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 990 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
9. Package outline
Fig 18. Package outline SOT363 (SC-88)
NX3008NBKS
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
All information provided in this document is subject to legal disclaimers.
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
Rev. 1 — 1 August 2011
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
1
H E
2.2
2.0
A
0.45
0.15
30 V, 350 mA dual N-channel Trench MOSFET
L p
A 1
2 mm
0.25
0.15
Q
H E
0.2
E
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
NX3008NBKS
Q
0.1
y
A
c
© NXP B.V. 2011. All rights reserved.
X
v
ISSUE DATE
M
04-11-08
06-03-16
A
SOT363
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