NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet - Page 8

• Manufacturer Part Number: NX3008NBKS,115
• Description: MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 990 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
NX3008NBKS
Product data sheet
Fig 6.
Fig 8.
R
DS
(Ω)
(A)
I
D
(on)
0.4
0.3
0.2
0.1
0.0
6
4
2
0
0.0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
j
j
= 25 °C
= 25 °C
GS
GS
GS
GS
GS
GS
= 1.5 V
= 1.75 V
= 2.0 V
= 2.25 V
= 2.5 V
= 4.5 V
(1)
4.5 V
2.5 V
0.1
1
(2)
0.2
2
V
GS
1.75 V
1.5 V
2 V
= 1.25 V
0.3
3
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(3)
(4)
(5)
(6)
V
001aao267
001aao269
I
DS
D
(A)
(V)
0.4
4
Rev. 1 — 1 August 2011
Fig 7.
Fig 9.
R
DS
(Ω)
(A)
I
(on)
D
10
10
10
10
30 V, 350 mA dual N-channel Trench MOSFET
-3
-4
-5
-6
6
4
2
0
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
D
j
= 25 °C; V
= 350 mA
j
j
= 150 °C
= 25 °C
1
DS
0.5
= 5 V
2
(1)
NX3008NBKS
3
(2)
1.0
(3)
V
© NXP B.V. 2011. All rights reserved.
GS
4
001aao268
001aao270
(1)
(2)
V
(V)
GS
(V)
1.5
5
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