NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet - Page 7

• Manufacturer Part Number: NX3008NBKS,115
• Description: MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 990 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
7. Characteristics
Table 7.
NX3008NBKS
Product data sheet
Symbol
Static characteristics (per transistor)
V
V
I
I
R
g
Dynamic characteristics (per transistor)
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode (per transistor)
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
forward
Conditions
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
V
T
V
R
I
All information provided in this document is subject to legal disclaimers.
D
D
S
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
= 25 °C
= 25 °C
= 350 mA; V
= 250 µA; V
= 250 µA; V
= 30 V; V
= 30 V; V
= 10 V; I
= 15 V; I
= 15 V; f = 1 MHz; V
= 20 V; R
= 8 V; V
= -8 V; V
= 4.5 V; V
= -4.5 V; V
= 2.5 V; V
= -2.5 V; V
= 4.5 V; I
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 6 Ω; T
Rev. 1 — 1 August 2011
DS
D
D
DS
D
D
D
D
GS
GS
L
GS
DS
DS
DS
= 350 mA; T
= 350 mA; V
GS
j
DS
DS
= 350 mA; T
= 350 mA; T
= 200 mA; T
= 10 mA; T
= 250 Ω; V
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
; T
j
j
= 25 °C
j
j
GS
= 25 °C
j
j
j
= 25 °C
= 150 °C
j
j
j
j
GS
= 25 °C
= 25 °C
= 25 °C
j
= 25 °C
= 25 °C
= 25 °C
= 25 °C
j
GS
= 25 °C
j
j
j
= 0 V;
= 25 °C
30 V, 350 mA dual N-channel Trench MOSFET
= 25 °C
= 150 °C
= 25 °C
= 4.5 V;
= 4.5 V;
Min
30
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.47
NX3008NBKS
Typ
-
0.9
-
-
0.2
0.2
10
10
1
1
1
1.8
1.4
2
310
0.52
0.17
0.08
34
6.5
2.2
15
11
69
19
0.85
© NXP B.V. 2011. All rights reserved.
-
-
-
Max
-
1.1
1
10
1
1
-
-
-
-
1.4
2.5
2.1
2.8
-
0.68
-
50
-
30
138
-
1.2
Unit
V
V
µA
µA
µA
µA
nA
nA
nA
nA
Ω
Ω
Ω
Ω
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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