PSMN3R3-80BS,118 NXP Semiconductors, PSMN3R3-80BS,118 Datasheet - Page 4

no-image

PSMN3R3-80BS,118

Manufacturer Part Number
PSMN3R3-80BS,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN3R3-80BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Resistance Drain-source Rds (on)
3.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
306 W
Factory Pack Quantity
800
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R3-80BS
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
10
10
10
th(j-mb)
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
δ = 0.5
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 29 February 2012
Conditions
see
minimum footprint; mounted on a
printed circuit board
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
Figure 4
10
-3
10
-2
PSMN3R3-80BS
Min
-
-
10
P
-1
Typ
0.22
50
t
p
T
t
© NXP B.V. 2012. All rights reserved.
p
003aag768
(s)
δ =
Max
0.49
-
T
t
p
t
1
Unit
K/W
K/W
4 of 14

Related parts for PSMN3R3-80BS,118