PSMN3R3-80BS,118 NXP Semiconductors, PSMN3R3-80BS,118 Datasheet - Page 9

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PSMN3R3-80BS,118

Manufacturer Part Number
PSMN3R3-80BS,118
Description
MOSFET Std N-chanMOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN3R3-80BS,118

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Resistance Drain-source Rds (on)
3.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Power Dissipation
306 W
Factory Pack Quantity
800
NXP Semiconductors
PSMN3R3-80BS
Product data sheet
Fig 17. Source current as a function of source-drain voltage; typical values
(A)
I
S
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
T
j
Rev. 2 — 29 February 2012
= 175 ° C
0.3
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
0.6
T
j
= 25 ° C
0.9
V
003aaf627
SD
(V)
1.2
PSMN3R3-80BS
© NXP B.V. 2012. All rights reserved.
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