PSMN3R3-80BS,118 NXP Semiconductors, PSMN3R3-80BS,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN3R3-80BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN3R3-80BS
Product data sheet
Fig 17. Source current as a function of source-drain voltage; typical values
(A)
I
S
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
T
j
Rev. 2 — 29 February 2012
= 175 ° C
0.3
N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK
0.6
T
j
= 25 ° C
0.9
V
003aaf627
SD
(V)
1.2
PSMN3R3-80BS
© NXP B.V. 2012. All rights reserved.
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