NX3008CBKV,115 NXP Semiconductors, NX3008CBKV,115 Datasheet
NX3008CBKV,115
Manufacturer Part Number
NX3008CBKV,115
Description
MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.NX3008CBKV115.pdf
(21 pages)
Specifications of NX3008CBKV,115
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
30 V, - 30 V
Resistance Drain-source Rds (on)
1 Ohms, 2.8 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-666
Fall Time
19 ns, 38 ns
Forward Transconductance Gfs (max / Min)
310 mS, 160 mS
Gate Charge Qg
0.17 nC, 0.23 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
500 mW
Rise Time
30 ns, 11 ns
Factory Pack Quantity
4000
Typical Turn-off Delay Time
69 ns, 65 ns
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
Table 1.
[1]
Symbol
TR2 (P-channel)
V
V
TR1 (N-channel)
V
V
TR1 (N-channel), Static characteristics
R
TR2 (P-channel), Static characteristics
R
I
I
D
D
DS
GS
DS
GS
DSon
DSon
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Low threshold voltage
Very fast switching
Trench MOSFET technology
Level shifter
Power supply converter
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
drain-source on-state
resistance
Conditions
T
V
T
V
V
T
V
T
j
j
j
j
GS
GS
GS
GS
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= -4.5 V; T
= 4.5 V; T
= 4.5 V; I
= -4.5 V; I
D
D
amb
amb
= 350 mA;
= -200 mA;
= 25 °C
= 25 °C
ESD protection up to 2 kV
AEC-Q101 qualified
Load switch
Switching circuits
[1]
[1]
Min
-
-8
-
-
-8
-
-
-
Product data sheet
Typ
-
-
-
-
-
-
1
2.8
Max
-30
8
-220
30
8
400
1.4
4.1
2
.
Unit
V
V
mA
V
V
mA
Ω
Ω
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