NX3008CBKV,115 NXP Semiconductors, NX3008CBKV,115 Datasheet - Page 3

• Manufacturer Part Number: NX3008CBKV,115
• Description: MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008CBKV,115

• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V, - 30 V
• Resistance Drain-source Rds (on): 1 Ohms, 2.8 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-666
• Fall Time: 19 ns, 38 ns
• Forward Transconductance Gfs (max / Min): 310 mS, 160 mS
• Gate Charge Qg: 0.17 nC, 0.23 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 30 ns, 11 ns
• Factory Pack Quantity: 4000
• Typical Turn-off Delay Time: 69 ns, 65 ns

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
NX3008CBKV
Product data sheet
Symbol
TR2 (P-channel)
V
V
I
I
P
TR1 (N-channel)
V
V
I
I
P
Per device
P
T
T
T
TR1 (N-channel), Source-drain diode
I
TR2 (P-channel), Source-drain diode
I
TR1 N-channel), ESD maximum rating
V
TR2 (P-channel), ESD maximum rating
V
D
DM
D
DM
S
S
j
amb
stg
DS
GS
tot
DS
GS
tot
tot
ESD
ESD
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Measured between all pins.
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
source current
electrostatic discharge voltage
electrostatic discharge voltage
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
V
V
T
T
T
T
T
T
HBM
HBM
j
amb
amb
sp
j
amb
amb
sp
amb
amb
amb
GS
GS
GS
GS
Rev. 1 — 29 July 2011
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= -4.5 V; T
= -4.5 V; T
= 4.5 V; T
= 4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C; single pulse; t
= 25 °C
= 25 °C
= 25 °C
= 25 °C
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
amb
amb
amb
amb
= 25 °C
= 100 °C
= 25 °C
= 100 °C
p
p
≤ 10 µs
≤ 10 µs
2
.
NX3008CBKV
[1]
[1]
[2]
[1]
[1]
[1]
[2]
[1]
[2]
[1]
[1]
[3]
[3]
Min
-
-8
-
-
-
-
-
-
-
-8
-
-
-
-
-
-
-
-55
-55
-65
-
-
-
-
© NXP B.V. 2011. All rights reserved.
150
150
150
Max
-30
8
-220
-140
-0.9
330
390
1090
30
8
400
260
1.6
330
390
1090
500
400
-220
2000
2000
Unit
V
V
mA
mA
A
mW
mW
mW
V
V
mA
mA
A
mW
mW
mW
mW
°C
°C
°C
mA
mA
V
V
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