PSMN3R3-80PS,127 NXP Semiconductors, PSMN3R3-80PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN3R3-80PS,127
• Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80PS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 44 ns
• Gate Charge Qg: 135 nC
• Power Dissipation: 338 W
• Rise Time: 43 ns
• Factory Pack Quantity: 50

NXP Semiconductors
Table 6.
[1]
PSMN3R3-80PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Measured 3 mm from package.
(S)
g
R
(m Ω )
fs
250
200
150
100
DSon
50
0
8
6
4
2
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4
20
8
…continued
40
12
60
16
All information provided in this document is subject to legal disclaimers.
003aag797
003aaf602
V
I
D
GS
(A)
(V)
Conditions
I
see
I
V
S
S
80
20
Rev. 1 — 27 October 2011
GS
= 25 A; V
= 25 A; dI
Figure 17
= 0 V; V
N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220
GS
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 20 V
16000
12000
(pF)
8000
4000
(A)
C
I
75
D
50
25
0
j
0
10
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
= 25 °C;
0
-1
T
j
2
1
PSMN3R3-80PS
= 175 ° C
Min
-
-
-
10
4
Typ
0.8
63
121
T
V
© NXP B.V. 2011. All rights reserved.
j
V
GS
= 25 ° C
C
C
GS
003aaf606
003aaf603
iss
rss
(V)
(V)
Max
1.2
-
-
10
6
2
Unit
V
ns
nC
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