PSMN3R3-80PS,127 NXP Semiconductors, PSMN3R3-80PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN3R3-80PS,127
• Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-80PS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 3.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 44 ns
• Gate Charge Qg: 135 nC
• Power Dissipation: 338 W
• Rise Time: 43 ns
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN3R3-80PS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
(A)
D
I
D
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics; drain current as a
0
0
10.0
0.2
6.0
2
5.0
0.4
min
0.6
typ
4
max
V
0.8
All information provided in this document is subject to legal disclaimers.
GS
003aag796
V
V
GS
(V)
DS
03aa35
(V) =
(V)
4.5
Rev. 1 — 27 October 2011
1
6
N-channel 80 V, 3.3 mΩ standard level MOSFET in TO-220
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.4
1.8
1.2
0.6
a
5
4
3
2
1
0
3
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN3R3-80PS
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
003aad280
T
003aaf608
j
j
(°C)
( ° C)
180
180
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