PSMN6R0-25YLB,115 NXP Semiconductors, PSMN6R0-25YLB,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN6R0-25YLB,115
• Description: MOSFET N-CH 25 V 6.1 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R0-25YLB,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Resistance Drain-source Rds (on): 6.1 mOhms at 10 V
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669-4
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 58 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN6R0-25YLB
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
80
60
40
20
0
mounting base temperature
Continuous drain current as a function of
Single pulse avalanche rating; avalanche current as a function of avalanche time
0
50
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
100
(A)
I
AL
10
10
150
2
1
10
All information provided in this document is subject to legal disclaimers.
-3
003aag105
T
mb
( ° C)
200
Rev. 2 — 31 October 2011
10
-2
10
-1
(1)
(2)
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
003aag106
t
AL
(ms)
10
50
PSMN6R0-25YLB
100
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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