PSMN6R0-25YLB,115 NXP Semiconductors, PSMN6R0-25YLB,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN6R0-25YLB,115
• Description: MOSFET N-CH 25 V 6.1 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R0-25YLB,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Resistance Drain-source Rds (on): 6.1 mOhms at 10 V
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669-4
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 58 W
• Factory Pack Quantity: 1500

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN6R0-25YLB
Product data sheet
Symbol
R
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
0.2
0.05
0.02
0.1
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
single shot
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 31 October 2011
10
-3
Conditions
see
Figure 5
10
-2
PSMN6R0-25YLB
Min
-
10
P
-1
tp
Typ
2.35
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
003aag093
δ =
Max
2.57
T
tp
t
1
Unit
K/W
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