PSMN6R0-25YLB,115 NXP Semiconductors, PSMN6R0-25YLB,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN6R0-25YLB,115
• Description: MOSFET N-CH 25 V 6.1 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN6R0-25YLB,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Resistance Drain-source Rds (on): 6.1 mOhms at 10 V
• Configuration: Single Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-669-4
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 58 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN6R0-25YLB
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
25
20
15
10
5
0
of drain current; typical values
0
V
V
V
V
V
GS(pl)
DS
GS(th)
GS
GS
(V) = 2.6
Q
20
GS1
I
Q
D
GS
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Q
GS2
40
Q
2.8
G(tot)
Q
GD
60
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All information provided in this document is subject to legal disclaimers.
3.0
003aaa508
I
D
(A)
3.5
4.5
10
80
Rev. 2 — 31 October 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
a
(V)
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
5
0
5V
PSMN6R0-25YLB
20V
10
60
15
V
4.5V
DS
= 12V
120
© NXP B.V. 2011. All rights reserved.
20
V
003aag116
003aag117
GS
T
Q
j
G
( ° C)
= 10V
(nC)
180
25
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