PSMN1R8-30BL,118 NXP Semiconductors, PSMN1R8-30BL,118 Datasheet - Page 10

• Manufacturer Part Number: PSMN1R8-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 270 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN1R8-30BL
Product data sheet
Fig 17. Source current as a function of source-drain voltage; typical values
100
(A)
I
80
60
40
20
S
0
0
All information provided in this document is subject to legal disclaimers.
0.2
T
j
Rev. 1 — 22 March 2012
= 175 °C
0.4
N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK
0.6
T
j
= 25 °C
0.8
003aag917
V
SD
(V)
1
PSMN1R8-30BL
© NXP B.V. 2012. All rights reserved.
10 of 15