PSMN1R8-30BL,118 NXP Semiconductors, PSMN1R8-30BL,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN1R8-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 270 W
• Factory Pack Quantity: 800

NXP Semiconductors
Table 7.
PSMN1R8-30BL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
18000
(pF)
16000
14000
12000
10000
R
(mΩ)
C
8000
DSon
8
6
4
2
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
Drain-source on-state resistance as a function
2
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4
3
…continued
6
6
8
9
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V
003aad400
003aad402
V
GS
GS
(V)
(V)
C
C
Conditions
I
see
I
V
S
S
rss
iss
GS
10
12
= 25 A; V
= 25 A; dI
Rev. 1 — 22 March 2012
Figure 17
= 0 V; V
GS
S
DS
N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK
/dt = -100 A/µs;
= 0 V; T
= 15 V
Fig 6.
Fig 8.
(S)
g
350
300
250
200
150
100
fs
(A)
100
50
I
D
80
60
40
20
j
0
0
= 25 °C;
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
20
1
T
j
= 175 °C
PSMN1R8-30BL
40
Min
-
-
-
2
60
Typ
0.7
64
60
T
j
= 25 °C
3
© NXP B.V. 2012. All rights reserved.
80
V
003aad401
003aad396
GS
I
D
-
Max
1.2
-
(A)
(V)
100
4
Unit
V
ns
nC
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