PSMN1R8-30BL,118 NXP Semiconductors, PSMN1R8-30BL,118 Datasheet - Page 5

• Manufacturer Part Number: PSMN1R8-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R8-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 270 W
• Factory Pack Quantity: 800

NXP Semiconductors
6. Thermal characteristics
Table 6.
PSMN1R8-30BL
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
-4
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
0.2
0.02
0.05
Thermal characteristics
0.1
δ = 0.5
single shot
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 1 — 22 March 2012
Conditions
see
Minimum footprint; mounted on
a printed-circuit board
Figure 4
10
N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK
-3
10
-2
PSMN1R8-30BL
Min
-
-
P
10
-1
t
p
Typ
0.3
50
T
t
© NXP B.V. 2012. All rights reserved.
p
(s)
δ =
003aad080
Max
0.56
-
T
t
p
t
1
Unit
K/W
K/W
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