PSMN2R0-30BL,118 NXP Semiconductors, PSMN2R0-30BL,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN2R0-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.1 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R0-30BL
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
10
10
10
10
10
10
DSon
(A)
I
D
-1
-2
-3
-4
-5
-6
5
4
3
2
1
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
20
min
1
40
3
V
GS
(V) =10 V
60
typ
2
3.5
V
80
All information provided in this document is subject to legal disclaimers.
GS
003aab271
003aad250
5
max
I
D
(V)
(A)
4
100
3
Rev. 1 — 20 March 2012
N-channel 30 V 2.1 mΩ logic level MOSFET in D2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS (th)
(V)
a
1.5
0.5
2
1
0
3
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN2R0-30BL
max
typ
min
60
60
120
120
© NXP B.V. 2012. All rights reserved.
003a a c982
T
T
j
j
(°C)
( ° C)
03aa27
180
180
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