PSMN2R2-40BS,118 NXP Semiconductors, PSMN2R2-40BS,118 Datasheet - Page 10

• Manufacturer Part Number: PSMN2R2-40BS,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 2.2 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 306 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN2R2-40BS
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DS
50
= 10 V
100
100
(A)
I
80
60
40
20
V
S
0
DS
0
Q
All information provided in this document is subject to legal disclaimers.
= 20V
003aad120
G
(nC)
0.2
150
Rev. 1 — 20 March 2012
T
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK
j
0.4
= 175 °C
Fig 16. Input, output and reverse transfer capacitances
0.6
12000
(pF)
C
8000
4000
0
10
as a function of drain-source voltage; typical
values
0.8
-1
003aad119
V
25 °C
sd
(V)
1
1
PSMN2R2-40BS
10
© NXP B.V. 2012. All rights reserved.
V
DS
003aad121
C
C
C
(V)
oss
rss
iss
10
2
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