PSMN9R5-100XS,127 NXP Semiconductors, PSMN9R5-100XS,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN9R5-100XS,127
• Description: MOSFET N-CH 100V 9.6 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31.3 A
• Resistance Drain-source Rds (on): 8.15 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 52.6 W
• Factory Pack Quantity: 50

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN9R5-100XS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN9R5-100XS
Symbol Description
G
D
S
Pinning information
Ordering information
gate
drain
source
mounting base; isolated
TO-220F
Package
Name
N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A)
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 6 March 2012
Simplified outline
SOT186A (TO-220F)
1
mb
2
3
Graphic symbol
PSMN9R5-100XS
mbb076
G
© NXP B.V. 2012. All rights reserved.
D
S
Version
SOT186A
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