PSMN9R5-100XS,127 NXP Semiconductors, PSMN9R5-100XS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN9R5-100XS,127
• Description: MOSFET N-CH 100V 9.6 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31.3 A
• Resistance Drain-source Rds (on): 8.15 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 52.6 W
• Factory Pack Quantity: 50

NXP Semiconductors
Table 7.
PSMN9R5-100XS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 6.
Fig 8.
SD
r
(A)
(S)
g
I
D
160
120
fs
160
120
80
40
80
40
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics; drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
V
GS
(V) = 10
40
1
6.0
…continued
80
2
120
3
N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
003aag593
003aag595
V
I
D
DS
(A)
4.6
(V)
5.0
4.8
4.4
4.2
4
160
Conditions
I
see
I
V
S
S
4
GS
Rev. 3 — 6 March 2012
= 10 A; V
= 10 A; dI
Figure 18
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 7.
Fig 9.
= 0 V; T
= 50 V
R
(m Ω )
(A)
DSon
I
D
160
120
80
60
40
20
80
40
0
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics; drain current as a
j
4
0
= 25 °C;
8
PSMN9R5-100XS
2
T
Min
-
-
-
j
12
= 175 ° C
4
Typ
0.76
61.5
157
16
© NXP B.V. 2012. All rights reserved.
V
T
003aag594
GS
V
003aag596
j
= 25 ° C
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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