PSMN9R5-100XS,127 NXP Semiconductors, PSMN9R5-100XS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN9R5-100XS,127
• Description: MOSFET N-CH 100V 9.6 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31.3 A
• Resistance Drain-source Rds (on): 8.15 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 52.6 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN9R5-100XS
Product data sheet
Fig 3.
Fig 4.
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D
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10
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10
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Single pulse avalanche rating; avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
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I
AL
10
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= V
-1
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1
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N-channel 100V 9.6 mΩ standard level MOSFET in TO220F (SOT186A)
DS
All information provided in this document is subject to legal disclaimers.
-3
/ I
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10
Rev. 3 — 6 March 2012
-2
10
10
-1
DC
1
(1)
(2)
t
003aag590
AL
(ms)
10
PSMN9R5-100XS
10
2
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
V
DS
(V)
© NXP B.V. 2012. All rights reserved.
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