PSMN012-80BS,118 NXP Semiconductors, PSMN012-80BS,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN012-80BS,118
• Description: MOSFET N-CH 80 V 11MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 1 V
• Continuous Drain Current: 74 A
• Resistance Drain-source Rds (on): 11 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 148 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN012-80BS
Product data sheet
Fig 1.
Fig 3.
10
10
10
(A)
(A)
10
I
80
60
40
20
-1
I
D
D
3
2
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
0
Limit R
DSon
50
= V
DS
/ I
D
100
150
All information provided in this document is subject to legal disclaimers.
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N-channel 80 V 11 mΩ standard level MOSFET in D2PAK
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
2
100 μs
1 ms
10 ms
100 ms
10 μs
50
PSMN012-80BS
100
V
DS
(V)
150
© NXP B.V. 2012. All rights reserved.
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