PSMN012-80BS,118 NXP Semiconductors, PSMN012-80BS,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN012-80BS,118
• Description: MOSFET N-CH 80 V 11MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 1 V
• Continuous Drain Current: 74 A
• Resistance Drain-source Rds (on): 11 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 148 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN012-80BS
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
2.5
2.0
1.5
1.0
0.5
0.0
(V)
a
10
GS
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
-30
10
0
V
DS
30
20
= 40 V
60
30
90
120
40
All information provided in this document is subject to legal disclaimers.
003aad033
003aad045
Q
150
G
T
(nC)
j
(°C)
180
50
Rev. 2 — 1 March 2012
N-channel 80 V 11 mΩ standard level MOSFET in D2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
10
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN012-80BS
GS
Q
GS2
C
C
C
iss
oss
Q
rss
G(tot)
Q
GD
10
© NXP B.V. 2012. All rights reserved.
V
DS
003aaa508
003aad034
(V)
10
2
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