PSMN012-80BS,118 NXP Semiconductors, PSMN012-80BS,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN012-80BS,118
• Description: MOSFET N-CH 80 V 11MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 1 V
• Continuous Drain Current: 74 A
• Resistance Drain-source Rds (on): 11 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 148 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN012-80BS
Product data sheet
Fig 5.
Fig 7.
250
200
150
100
100
(A)
(A)
I
50
I
80
60
40
20
D
D
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
1
2
6.5
7
2
4
T
10
j
= 175 °C
3
6
4
V
GS
(V) = 15
All information provided in this document is subject to legal disclaimers.
8
003aad029
003aad031
5
25 °C
V
V
DS
GS
5.5
4.5
6
5
(V)
(V)
10
6
Rev. 2 — 1 March 2012
N-channel 80 V 11 mΩ standard level MOSFET in D2PAK
Fig 6.
Fig 8.
R
(mΩ)
4000
3000
2000
(pF)
DSon
C
25
20
15
10
5
of drain current; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Input and reverse transfer capacitances as a
0
2
5
V
GS
50
(V) = 15
C
C
4
iss
rss
5.5
PSMN012-80BS
100
6
6
150
8
200
© NXP B.V. 2012. All rights reserved.
V
003aad035
003aad030
GS
I
D
(A)
(V)
10
7
250
10
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