SSM6J07FUTE85LF Toshiba, SSM6J07FUTE85LF Datasheet - Page 2

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SSM6J07FUTE85LF

Manufacturer Part Number
SSM6J07FUTE85LF
Description
MOSFET Vds=-30V Id=-800mA 6Pin
Manufacturer
Toshiba
Datasheet

Specifications of SSM6J07FUTE85LF

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.8 A
Resistance Drain-source Rds (on)
450 mOhms
Configuration
Single Quad Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
ES-6
Minimum Operating Temperature
- 55 C
Power Dissipation
300 mW
Factory Pack Quantity
3000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSM6J07FUTE85LF
Manufacturer:
Toshiba
Quantity:
135
Electrical Characteristics
Switching Time Test Circuit
Precaution
V
product. For normal switching operation, V
voltage than Vth.
(relationship can be established as follows: V
Please take this into consideration for using the device.
th
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 2: Pulse test
(a) Test circuit
can be expressed as voltage between gate and source when low operating current value is I
−4 V
0
Characteristics
V
R
Duty ≤ 1%
Input: t
Common source
Ta = 25°C
DD
G
10 μs
= 10 Ω
= −15 V
r
, t
Turn-on time
Turn-off time
f
< 5 ns
Input
I
(Ta = 25°C)
D
V
Output
R
Symbol
V
(BR) DSS
DS (ON)
⏐Y
I
I
C
C
DD
C
GSS
DSS
V
t
t
oss
on
off
rss
iss
GS (on)
th
fs
GS (off)
requires higher voltage than V
V
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
DD
GS
< V
= −1 mA, V
= −0.4 A, V
= −0.4 A, V
= −0.4 A, V
= −30 V, V
= −5 V, I
= −5 V, I
= −15 V, V
= −15 V, V
= −15 V, V
= ±16 V, V
= −15 V, I
= 0 to −4 V, R
th
2
OUT
IN
< V
Test Condition
GS (on)
D
D
GS
GS
GS
GS
D
GS
= −0.1 mA
= −0.4 A
GS
GS
GS
DS
= −0.4 A,
= 0
= −10 V
= −4 V
= −3.3 V
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
G
= 10 Ω
)
V
DS (ON)
−4 V
V
0 V
DD
(Note2)
(Note2)
(Note2)
(Note2)
th
and V
−1.1
Min
−30
0.7
10%
t
on
GS
t
r
(off) requires lower
10%
Typ.
90%
D
350
570
130
0.7
16
52
28
38
SSM6J07FU
= −100 μA for this
90%
t
2009-10-07
off
−1.8
Max
450
800
1.6
t
±1
−1
f
Unit
μA
μA
pF
pF
pF
ns
ns
Ω
V
V
S

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