SSM6J07FUTE85LF Toshiba, SSM6J07FUTE85LF Datasheet - Page 4

• Manufacturer Part Number: SSM6J07FUTE85LF
• Description: MOSFET Vds=-30V Id=-800mA 6Pin
• Manufacturer: Toshiba

Specifications of SSM6J07FUTE85LF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.8 A
• Resistance Drain-source Rds (on): 450 mOhms
• Configuration: Single Quad Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: ES-6
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 mW
• Factory Pack Quantity: 3000

−0.001
−0.01
1000
−0.1
500
100
−10
50
10
−1
−0.1
−0.1
5
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
* Single non-repetitive
Curves must be derated
linearly with increase in
temperature.
(continuous)
Mounted on FR4 board
(25.4 mm × 25.4 mm ×1.6 mm
Cu pad: 0.32 mm
I D max (pulse) *
pulse Ta = 25°C
I D max
DC operation
Drain-Source voltage V DS (V)
Drain-Source voltage V DS (V)
Ta = 25°C
−0.5
Safe Operating Area
−1
−1
2
× 6) Figure 1
C – V
DS
−5
100 ms
V DSS max
−10
−10
10 ms
1 ms
C oss
C iss
C rss
−50
−100
−100
4
500
300
100
350
300
250
200
150
100
50
30
10
50
−0.01
5
0
0
20
t f
t on
t r
−0.03
Ambient temperature Ta (°C)
t off
40
Drain current I D (A)
60
P
t – I
D
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm,
Cu pad: 0.32 mm
Figure 1
−0.1
80
– Ta
D
100
Common Source
V DD = −15 V
V GS = 0 to −4 V
R g = 10 Ω
Ta = 25°C
SSM6J07FU
−0.3
120
2
× 6)
2009-10-07
140
160
−1