SSM6J07FUTE85LF Toshiba, SSM6J07FUTE85LF Datasheet - Page 3

• Manufacturer Part Number: SSM6J07FUTE85LF
• Description: MOSFET Vds=-30V Id=-800mA 6Pin
• Manufacturer: Toshiba

Specifications of SSM6J07FUTE85LF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.8 A
• Resistance Drain-source Rds (on): 450 mOhms
• Configuration: Single Quad Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: ES-6
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 mW
• Factory Pack Quantity: 3000

1600
1400
1200
1000
0.03
0.01
−1.5
−0.5
800
600
400
200
0.3
0.1
10
−2
−1
−0.01
0
0
3
1
0
0
Common Source
V DS = −5 V
Ta = 25°C
−0.03
V GS = −3.3 V
Drain-Source voltage V DS (V)
−0.5
−0.5
−10
Drain current I D (A)
Drain current I D (A)
−0.1
R
DS (ON)
I
|Y
D
fs
– V
−0.3
−1
−1
| – I
DS
−4
D
– I
−4 V
−10 V
D
−1
Common Source
Ta = 25°C
Common Source
Ta = 25°C
−1.5
−1.5
V GS = −2.4 V
−3
−3.3
−3.0
−2.8
−2.6
−10
−2
−2
3
−3000
−1000
−0.01
−100
1600
1400
1200
1000
−0.1
−1.5
−0.5
−10
800
600
400
200
−1
−2
−1
−25
0
0
0
0
Common Source
V DS = −5 V
Common Source
I D = −0.4 A
Common Source
V GS = 0
Ta = 25°C
G
−0.5
0.2
0
Drain-Source voltage V DS (V)
Gate-Source voltage V GS (V)
Ambient temperature Ta (°C)
V GS = −3.3 V
0.4
−1
25
D
S
R
I
DS (ON)
−1.5
I
DR
0.6
I
DR
50
D
25°C
Ta = 100°C
– V
– V
GS
−4 V
0.8
−2
75
DS
– Ta
−10 V
−2.5
−25°C
100
SSM6J07FU
1
2009-10-07
125
1.2
−3
−3.5
150
1.4