SIHW30N60E-GE3 Vishay/Siliconix, SIHW30N60E-GE3 Datasheet - Page 3
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SIHW30N60E-GE3
Manufacturer Part Number
SIHW30N60E-GE3
Description
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHW30N60E-GE3.pdf
(8 pages)
Specifications of SIHW30N60E-GE3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
4 V
Continuous Drain Current
29 A
Resistance Drain-source Rds (on)
125 mOhms at 10 V
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-247AD
Fall Time
75 ns
Forward Transconductance Gfs (max / Min)
5.4 S
Gate Charge Qg
130 nC
Power Dissipation
250 W
Rise Time
65 ns
Tradename
E-Series
Typical Turn-off Delay Time
95 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-3103- Rev. B, 24-Dec-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 2 - Typical Output Characteristics, T
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
Fig. 1 - Typical Output Characteristics, T
0
0
www.vishay.com
5
5
V
V
DS
DS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
10
10
T
J
= 25 °C
15
15
T
J
= 150 °C
20
20
For technical questions, contact:
BOTTOM 5.0 V
TOP
TOP
BOTTOM 5.0 V
C
= 150 °C
25
25
5 V
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
C
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
= 25 °C
30
30
3
hvm@vishay.com
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
Fig. 4 - Normalized On-Resistance vs. Temperature
80
60
20
0
www.vishay.com/doc?91000
- 60 - 40 - 20
0
Fig. 3 - Typical Transfer Characteristics
T
J
= 25 °C
5
V
T
GS
J
0
V
I
D
- Junction Temperature (°C)
, Gate-to-Source Voltage (V)
GS
= 15 A
= 10 V
20
10
40
T
J
SiHW30N60E
Vishay Siliconix
60
= 150 °C
Document Number: 91525
15
80 100 120 140 160
20
25