SIHW30N60E-GE3 Vishay/Siliconix, SIHW30N60E-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIHW30N60E-GE3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHW30N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 4 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247AD
• Fall Time: 75 ns
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 130 nC
• Power Dissipation: 250 W
• Rise Time: 65 ns
• Tradename: E-Series
• Typical Turn-off Delay Time: 95 ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-3103- Rev. B, 24-Dec-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 2 - Typical Output Characteristics, T
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
Fig. 1 - Typical Output Characteristics, T
0
0
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5
5
V
V
DS
DS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
10
10
T
J
= 25 °C
15
15
T
J
= 150 °C
20
20
For technical questions, contact:
BOTTOM 5.0 V
TOP
TOP
BOTTOM 5.0 V
C
= 150 °C
25
25
5 V
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
C
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
= 25 °C
30
30
3
[e-mail]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
Fig. 4 - Normalized On-Resistance vs. Temperature
80
60
20
0
www.vishay.com/doc?91000
- 60 - 40 - 20
0
Fig. 3 - Typical Transfer Characteristics
T
J
= 25 °C
5
V
T
GS
J
0
V
I
D
- Junction Temperature (°C)
, Gate-to-Source Voltage (V)
GS
= 15 A
= 10 V
20
10
40
T
J
SiHW30N60E
Vishay Siliconix
60
= 150 °C
Document Number: 91525
15
80 100 120 140 160
20
25