SIHW30N60E-GE3 Vishay/Siliconix, SIHW30N60E-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIHW30N60E-GE3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHW30N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 4 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247AD
• Fall Time: 75 ns
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 130 nC
• Power Dissipation: 250 W
• Rise Time: 65 ns
• Tradename: E-Series
• Typical Turn-off Delay Time: 95 ns

S12-3103- Rev. B, 24-Dec-12
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
10 000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
0.001
1000
1000
100
0.01
10
100
1
0.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
24
20
16
12
10
8
4
0
1
0.0
0
0
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0.2
I
D
C
25
100
= 15 A
iss
T
J
V
V
0.4
C
= 150 °C
SD
DS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
rss
Q
- Source-to-Drain Voltage (V)
g
- Drain-to-Source Voltage (V)
50
200
- Total Gate Charge (nC)
C
0.6
oss
T
V
C
C
C
J
GS
75
0.8
iss
rss
oss
= 25 °C
300
= 0 V, f = 1 MHz
= C
= C
= C
V
DS
gs
gd
ds
1.0
= 120 V
+ C
100
+ C
400
For technical questions, contact:
gd
gd
1.2
x C
V
DS
V
DS
125
ds
= 300 V
500
= 480 V
shorted
1.4
150
1.6
600
4
1000
[e-mail]
100
0.1
10
30.0
25.0
20.0
15.0
10.0
1
5.0
0.1
0
* V
Fig. 9 - Maximum Drain Current vs. Case Temperature
25
Fig. 10 - Temperature vs. Drain-to-Source Voltage
T
T
Single Pulse
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GS
Fig. 8 - Maximum Safe Operating Area
C
J
= 150 °C
= 25 °C
> minimum V
Operation in this area
limited by R
V
DS
50
1
, Drain-to-Source Voltage (V)
T
T
C
GS
J
DS(on)
- Temperature (°C)
- Temperature (°C)
75
at which R
10
BVDSS Limited
SiHW30N60E
100
Vishay Siliconix
Document Number: 91525
I
DS(on)
DM
100
Limited
is specified
125
1000
1 ms
10 ms
100 μs
150