SIHW30N60E-GE3 Vishay/Siliconix, SIHW30N60E-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIHW30N60E-GE3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHW30N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 4 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247AD
• Fall Time: 75 ns
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 130 nC
• Power Dissipation: 250 W
• Rise Time: 65 ns
• Tradename: E-Series
• Typical Turn-off Delay Time: 95 ns

S12-3103- Rev. B, 24-Dec-12
Vary t
required I
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
p
0.01
Fig. 14 - Unclamped Inductive Test Circuit
0.1
to obtain
0.0001
1
90 %
10 %
AS
V
Fig. 12 - Switching Time Test Circuit
V
Fig. 13 - Switching Time Waveforms
DS
GS
R
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 V
www.vishay.com
G
G
0.2
0.1
Single Pulse
Duty Cycle = 0.5
0.05
0.02
10 V
V
t
GS
d(on)
V
DS
V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
t
DS
p
t
r
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
I
AS
D.U.T
D.U.T.
0.01 Ω
L
R
D
t
0.001
d(off)
For technical questions, contact:
t
f
+
-
V
DD
+
-
V
Square Wave Pulse Duration (s)
DD
5
0.01
[e-mail]
Fig. 15 - Unclamped Inductive Waveforms
10 V
www.vishay.com/doc?91000
V
Fig. 16 - Basic Gate Charge Waveform
I
AS
12 V
V
DS
V
G
Fig. 17 - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
GS
0.1
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
t
GD
p
G
I
G
SiHW30N60E
Vishay Siliconix
Document Number: 91525
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS
1