SIHW30N60E-GE3 Vishay/Siliconix, SIHW30N60E-GE3 Datasheet - Page 5
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SIHW30N60E-GE3
Manufacturer Part Number
SIHW30N60E-GE3
Description
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHW30N60E-GE3.pdf
(8 pages)
Specifications of SIHW30N60E-GE3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
4 V
Continuous Drain Current
29 A
Resistance Drain-source Rds (on)
125 mOhms at 10 V
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-247AD
Fall Time
75 ns
Forward Transconductance Gfs (max / Min)
5.4 S
Gate Charge Qg
130 nC
Power Dissipation
250 W
Rise Time
65 ns
Tradename
E-Series
Typical Turn-off Delay Time
95 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
S12-3103- Rev. B, 24-Dec-12
Vary t
required I
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
p
0.01
Fig. 14 - Unclamped Inductive Test Circuit
0.1
to obtain
0.0001
1
90 %
10 %
AS
V
Fig. 12 - Switching Time Test Circuit
V
Fig. 13 - Switching Time Waveforms
DS
GS
R
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 V
www.vishay.com
G
G
0.2
0.1
Single Pulse
Duty Cycle = 0.5
0.05
0.02
10 V
V
t
GS
d(on)
V
DS
V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
t
DS
p
t
r
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
I
AS
D.U.T
D.U.T.
0.01 Ω
L
R
D
t
0.001
d(off)
For technical questions, contact:
t
f
+
-
V
DD
+
-
V
Square Wave Pulse Duration (s)
DD
5
0.01
hvm@vishay.com
Fig. 15 - Unclamped Inductive Waveforms
10 V
www.vishay.com/doc?91000
V
Fig. 16 - Basic Gate Charge Waveform
I
AS
12 V
V
DS
V
G
Fig. 17 - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
GS
0.1
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
t
GD
p
G
I
G
SiHW30N60E
Vishay Siliconix
Document Number: 91525
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS
1