SIHW30N60E-GE3 Vishay/Siliconix, SIHW30N60E-GE3 Datasheet - Page 7
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SIHW30N60E-GE3
Manufacturer Part Number
SIHW30N60E-GE3
Description
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHW30N60E-GE3.pdf
(8 pages)
Specifications of SIHW30N60E-GE3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
4 V
Continuous Drain Current
29 A
Resistance Drain-source Rds (on)
125 mOhms at 10 V
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-247AD
Fall Time
75 ns
Forward Transconductance Gfs (max / Min)
5.4 S
Gate Charge Qg
130 nC
Power Dissipation
250 W
Rise Time
65 ns
Tradename
E-Series
Typical Turn-off Delay Time
95 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TO-247AD (HIGH VOLTAGE)
Revision: 22-Oct-12
ECN: X12-0191-Rev. A, 22-Oct-12
DWG: 6010
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
DIM.
Ø p
A1
A2
D1
b2
b4
L1
D
A
b
E
L
c
e
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
20.80
15.77
19.85
MIN.
4.90
2.30
1.92
1.15
1.95
2.85
4.37
5.32
4.07
3.56
For technical questions, contact:
MILLIMETERS
0.6 BSC
MAX.
21.46
16.03
20.11
5.10
2.40
2.08
1.25
2.05
3.11
4.63
5.58
4.33
3.66
1
hvm@vishay.com
www.vishay.com/doc?91000
0.193
0.090
0.076
0.045
0.077
0.112
0.819
0.172
0.209
0.621
0.781
0.160
0.140
MIN.
Package Information
0.024 BSC
INCHES
Vishay Siliconix
Document Number: 91528
MAX.
0.200
0.094
0.082
0.049
0.081
0.122
0.845
0.182
0.220
0.631
0.792
0.170
0.144