SIHW30N60E-GE3 Vishay/Siliconix, SIHW30N60E-GE3 Datasheet - Page 7

• Manufacturer Part Number: SIHW30N60E-GE3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHW30N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 4 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247AD
• Fall Time: 75 ns
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 130 nC
• Power Dissipation: 250 W
• Rise Time: 65 ns
• Tradename: E-Series
• Typical Turn-off Delay Time: 95 ns

TO-247AD (HIGH VOLTAGE)
Revision: 22-Oct-12
ECN: X12-0191-Rev. A, 22-Oct-12
DWG: 6010
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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For technical questions, contact:
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Package Information
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Vishay Siliconix
Document Number: 91528
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