FDD14AN06LA0_F085 Fairchild Semiconductor, FDD14AN06LA0_F085 Datasheet - Page 10
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FDD14AN06LA0_F085
Manufacturer Part Number
FDD14AN06LA0_F085
Description
MOSFET 60V N-CHAN PwrTrench
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDD14AN06LA0_F085.pdf
(11 pages)
Specifications of FDD14AN06LA0_F085
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
50 A
Resistance Drain-source Rds (on)
12.8 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-252AA
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Factory Pack Quantity
2500
©2010 Fairchild Semiconductor Corporation
SPICE Thermal Model
REV January 2004
FDD14AN06LA0T
CTHERM1 TH 6 2.5e-3
CTHERM2 6 5 3e-3
CTHERM3 5 4 4e-3
CTHERM4 4 3 7e-3
CTHERM5 3 2 8.2e-3
CTHERM6 2 TL 5e-2
RTHERM1 TH 6 4.2e-2
RTHERM2 6 5 8.4e-2
RTHERM3 5 4 1.04e-1
RTHERM4 4 3 1.14e-1
RTHERM5 3 2 2.74e-1
RTHERM6 2 TL 3.44e-1
SABER Thermal Model
SABER thermal model FDD14AN06LA0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =2.5e-3
ctherm.ctherm2 6 5 =3e-3
ctherm.ctherm3 5 4 =4e-3
ctherm.ctherm4 4 3 =7e-3
ctherm.ctherm5 3 2 =8.2e-3
ctherm.ctherm6 2 tl =5e-2
rtherm.rtherm1 th 6 =4.2e-2
rtherm.rtherm2 6 5 =8.4e-2
rtherm.rtherm3 5 4 =1.04e-1
rtherm.rtherm4 4 3 =1.14e-1
rtherm.rtherm5 3 2 =2.74e-1
rtherm.rtherm6 2 tl =3.44e-1
}
RTHERM5
RTHERM1
RTHERM2
RTHERM3
RTHERM6
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM6
CTHERM1
CTHERM3
CTHERM4
FDD14AN06LA0_F085 Rev. C