FDD14AN06LA0_F085 Fairchild Semiconductor, FDD14AN06LA0_F085 Datasheet - Page 6

• Manufacturer Part Number: FDD14AN06LA0_F085
• Description: MOSFET 60V N-CHAN PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD14AN06LA0_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 12.8 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Factory Pack Quantity: 2500

©2010 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
V
0V
GS
I
Figure 15. Unclamped Energy Test Circuit
g(REF)
Figure 19. Switching Time Test Circuit
P
Figure 17. Gate Charge Test Circuit
TO OBTAIN
V
t
GS
P
V
GS
AS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
AS
DS
L
DUT
R
DUT
L
0.01
L
-
+
V
-
-
+
+
DD
V
V
DD
DD
0
I
0
0
V
V
V
g(REF)
0
0
V
DD
GS
DS
10%
GS
Figure 16. Unclamped Energy Waveforms
= 1V
Figure 20. Switching Time Waveforms
Figure 18. Gate Charge Waveforms
t
d(ON)
90%
Q
Q
gs
Q
50%
t
gs2
ON
g(TH)
10%
t
r
I
AS
PULSE WIDTH
Q
V
t
DS
gd
P
Q
g(TOT)
BV
t
AV
DSS
V
GS
t
d(OFF)
FDD14AN06LA0_F085 Rev. C
90%
V
t
DS
OFF
50%
t
V
f
10%
GS
V
= 5V
DD
90%